K9K8G08U1A-I 查看數據表（PDF） - Samsung

零件编号

产品描述 (功能)

生产厂家

K9K8G08U1A-I

FLASH MEMORY

Samsung 

K9K8G08U1A

K9F4G08U0A

Preliminary

FLASH MEMORY

Data Protection & Power up sequence

The device is designed to offer protection from any involuntary program/erase during power-transitions. An internal voltage detector

disables all functions whenever Vcc is below about 2V. WP pin provides hardware protection and is recommended to be kept at VIL

during power-up and power-down. A recovery time of minimum 100µs is required before internal circuit gets ready for any command

sequences as shown in Figure 21. The two step command sequence for program/erase provides additional software protection.

Figure 21. AC Waveforms for Power Transition

3.3V device : ~ 2.5V

VCC

High

WP

WE

100µs

3.3V device : ~ 2.5V

43

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