KSA1203(2004) 查看數據表（PDF） - Fairchild Semiconductor
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KSA1203 Datasheet PDF : 4 Pages
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KSA1203
Low Frequency Power Amplifier
• 3W Output application
• Collector Power Dissipation PC=1~2W : Mounted on Ceramic Board
• Complement to KSC2883
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current
IB
Base Current
PC
Collector Power Dissipation
PC*
TJ
Junction Temperature
TSTG
Storage Temperature
* Mounted on Ceramic Board (250mm2 × 0.8mm)
1
SOT-89
1. Base 2. Collector 3. Emitter
Ratings
-30
-30
-5
-1.5
-0.3
500
1,000
150
-55 ~ 150
Units
V
V
V
A
A
mW
mW
°C
°C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Min. Typ. Max. Units
BVCEO
Collector-Emitter Breakdown Voltage IC= -10mA, IB=0
-30
V
BVEBO
Emitter-Base Breakdown Voltage
IE= -1mA, IC=0
-5
V
ICBO
Collector Cut-off Current
VCB= -30V, IE=0
-100
nA
IEBO
Emitter Cut-off Current
VBE= -5V, IC=0
-100
nA
hFE
DC Current Gain
VCE= -2V, IC= -500mA
100
320
VCE (sat) Collector-Emitter Saturation Voltage
IC= -1.5A, IB= -30mA
-2.0
V
VBE (on) Base-Emitter On Voltage
VCE= -2V, IC= -500mA
-1.0
V
fT
Current Gain Bandwidth Product
VCE= -2V, IC= -500mA
120
MHz
Cob
Output Capacitance
VCB= -10V, IE=0, f=1MHz
50
pF
hFE Classification
Classification
hFE
O
100 ~ 200
Marking
Y
160 ~ 320
SGX
hFE grade
©2004 Fairchild Semiconductor Corporation
Rev. A3, June 2004
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