KTC3770V 查看數據表（PDF） - KEC
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KTC3770V Datasheet PDF : 5 Pages
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SEMICONDUCTOR
TECHNICAL DATA
VHF/UHF WIDE BAND AMPLIFIER APPLICATION.
FEATURES
Low Noise Figure, High Gain.
NF=1.1dB, |S21e|2=11dB (f=1GHz).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature Range
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
RATING
20
12
3
100
100
150
-55 150
UNIT
V
V
V
mA
mW
KTC3770V
EPITAXIAL PLANAR NPN TRANSISTOR
E
B
2
DIM MILLIMETERS
A
1.2+_ 0.05
B
0.8+_ 0.05
1
3
C
0.5+_ 0.05
D
0.3+_ 0.05
E
1.2+_ 0.05
G
0.8+_ 0.05
P
P
H
0.40
J
0.12+_ 0.05
K
0.2+_ 0.05
P
5
1. EMITTER
2. BASE
3. COLLECTOR
VSM
Marking
R
Type Name
hFE Rank
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
TEST CONDITION
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector Output Capacitance
Reverse Transfer Capacitance
Transition Frequency
Insertion Gain
ICBO
IEBO
hFE (Note1)
Cob
Cre
fT
|S21e|2
VCB=10V, IE=0
VEB=1V, IC=0
VCE=10V, IC=20mA
VCB=10V, IE=0, f=1MHz (Note2)
VCE=10V, IC=20mA
VCE=10V, IC=20mA, f=1GHz
Noise Figure
NF
VCE=10V, IC=7mA, f=1GHz
Note 1 : hFE Classification A:50~100, B:80~160, C:125~250.
Note 2 : Cre is measured by 3 terminal method with capacitance bridge.
MIN.
-
-
50
-
-
5
7.5
-
TYP.
-
-
-
-
0.65
7
11.5
1.1
MAX.
1
1
250
1.0
1.15
-
-
2
UNIT
A
A
pF
pF
GHz
dB
dB
2003. 8. 5
Revision No : 0
1/5
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