L482 查看數據表（PDF） - STMicroelectronics
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L482 Datasheet PDF : 11 Pages
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L482
ABSOLUTE MAXIMUM RATINGS
Symbol
VR
VD
Ptot
Parameter
Reverse Battery Voltage
Dump Voltage
Power Dissipation at Tamb = 90°C
Tj, Tstg Junction and Storage Temperature Range
BLOCK DIAGRAM
Value
Unit
– 14
V
100
V
SO16
1.2
W
DIP
0.65
W
– 55 to 150
°C
THERMAL DATA
Symbol
Rth j-amb
Rth j-al
Parameter
Thermal Resistance Junction-ambient (DIP16)
Thermal Resistance Junction-alumina (SO16)
Value
Unit
Max
90
°C/W
Max
50
°C/W
(*) Thermal resistance junction-aluminia with the device soldered on the middle of an aluminia supporting substrate measuring 15 x 20mm ;
0.65mm thickness with infinite heatsink.
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