2N5087TA 查看數據表（PDF） - Philips Electronics
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2N5087TA Datasheet PDF : 8 Pages
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Philips Semiconductors
PNP general purpose transistor
Product specification
2N5087
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tstg
Tj
Tamb
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tamb ≤ 25 °C; note 1
Note
1. Transistor mounted on an FR4 printed-circuit board.
MIN.
−
−
−
−
−
−
−
−65
−
−65
MAX.
−50
−50
−3
−100
−200
−200
500
+150
150
+150
UNIT
V
V
V
mA
mA
mA
mW
°C
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
Note
1. Transistor mounted on an FR4 printed-circuit board.
CONDITIONS
note 1
VALUE
250
UNIT
K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector cut-off current
IEBO
emitter cut-off current
hFE
DC current gain
VCEsat
VBE
Cc
Ce
fT
F
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
CONDITIONS
IE = 0; VCB = −10 V
IE = 0; VCB = −35 V
IC = 0; VEB = −3 V
IC = −100 µA; VCE = −5 V
IC = −1 mA; VCE = −5 V
IC = −10 mA; VCE = −5 V
IC = −10 mA; IB = −1 mA
MIN.
−
−
−
250
250
250
−
TYP.
−
−
−
−
−
−
−
MAX.
−10
−50
−50
800
−
−
−300
UNIT
nA
nA
nA
mV
IC = −1 mA; VCE = −5 V
−
−
−850 mV
IE = ie = 0; VCB = −5 V; f = 100 kHz
−
−
4
pF
IC = ic = 0; VEB = −500 mV; f = 1 MHz −
12
−
IC = −500 µA; VCE = −5 V; f = 100 MHz 40
−
−
IC = −200 µA; VCE = −5 V; RS = 2 kΩ; −
−
3
f = 10 Hz to 15.7 kHz
pF
MHz
dB
IC = −200 µA; VCE = −5 V; RS = 2 kΩ; −
−
4
dB
f = 1 kHz; B = 200 Hz
1997 Jul 02
3
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