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LTC4359 查看數據表(PDF) - Linear Technology

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LTC4359 Datasheet PDF : 16 Pages
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LTC4359
Applications Information
is not needed. D1, a 70V TVS, protects IN and SOURCE in
the positive direction during load steps and overvoltage
conditions. OUT can be protected by an output capacitor,
COUT of at least 1.5µF, a TVS across the MOSFET or by
the MOSFET’s avalanche breakdown. Care must be taken
if the MOSFET’s avalanche breakdown is used to protect
the OUT pin. The MOSFET’s BVDSS must be sufficiently
lower than 100V, and the MOSFET’s avalanche energy rat-
ing must be ample enough to absorb the inductive energy.
If a TVS across the MOSFET or the MOSFET avalanche
is used to protect the OUT pin, COUT can be reduced to
47nF. COUT and R1 preserve the fast turn off time when
output parasitic inductance causes the IN and OUT volt-
ages to drop quickly.
Paralleling Supplies
Multiple LTC4359s can be used to combine the outputs of
two or more supplies for redundancy or for droop sharing,
as shown in Figure 5. For redundant supplies, the supply
with the highest output voltage sources most or all of the
load current. If this supply’s output is quickly shorted to
ground while delivering load current, the flow of current
temporarily reverses and flows backwards through the
LTC4359’s MOSFET. The LTC4359 senses this reverse
VINA = 12V
PSA
RTNA
Q1A
FDMS86101
D2A
SMAJ24CA
24V
IN SOURCE
GATE OUT
SHDN
LTC4359
VSS
12V
10A
BUS
COUTA
1.5µF
VINB = 12V
PSB
RTNB
R1A
1k
Q1B
FDMS86101
D2B
SMAJ24CA
24V
IN SOURCE
GATE OUT
SHDN
LTC4359
VSS
COUTB
1.5µF
R1B
1k
4359 F05
current and activates a fast pull-down to quickly turn off
the MOSFET.
If the other, initially lower, supply was not delivering any
load current at the time of the fault, the output falls until the
body diode of its ORing MOSFET conducts. Mean-while,
the LTC4359 charges the MOSFET gate with 10µA until
the forward drop is reduced to 30mV. If this supply was
sharing load current at the time of the fault, its associated
ORing MOSFET was already driven partially on. In this case,
the LTC4359 will simply drive the MOSFET gate harder in
an effort to maintain a drop of 30mV.
Droop sharing can be accomplished if both power supply
output voltages and output impedances are nearly equal.
The 30mV regulation technique ensures smooth load
sharing between outputs without oscillation. The degree
of sharing is a function of MOSFET RDS(ON), the output
impedance of the supplies and their initial output voltages.
Load Switching and Inrush Control
By adding a second MOSFET as shown in Figure 6, the
LTC4359 can be used to control power flow in the for-
ward direction while retaining ideal diode behavior in the
reverse direction. The body diodes of Q1 and Q2 prohibit
Q2
FQA140N10
Q1
FDMS86101
VIN
28V
D1
SMAJ58A
58V
R3
D2
C1
SMAJ24A 10nF
24V
R4
10k
10Ω
D4
DDZ9699T
12V
VOUT
28V
10A
CLOAD
IN
ON OFF SHDN
SOURCE GATE OUT
LTC4359
COUT
1.5µF
VSS
4359 F06
R1
1k
Figure 6. 28V Load Switch and Ideal
Diode with Reverse Input Protection
Figure 5. Redundant Power Supplies
4359f
10

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