MA4E2508 查看數據表（PDF） - M/A-COM Technology Solutions, Inc.

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MA4E2508

SURMOUNT™ Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair

M/A-COM Technology Solutions, Inc. 

MA4E2508 Series

SURMOUNTTM Low, Medium, & High Barrier Silicon

Schottky Diodes: Anti-Parallel Pair

Rev. V5

Features

• Extremely Low Parasitic Capacitance &

Inductance

• Surface Mountable in Microwave Circuits, No

Wirebonds Required

• Rugged HMIC Construction with Polyimide

Scratch Protection

• Reliable, Multilayer Metalization with a Diffusion

Barrier, 100% Stabilization Bake (300°C,

16 hours)

Description

The MA4E2508 SURMOUNTTM Anti-Parallel Diode

Series are Silicon Low, Medium, & High Barrier

Schottky Devices fabricated with the patented

Heterolithic Microwave Integrated Circuit (HMIC)

process. HMIC circuits consist of Silicon pedestals

which form diodes or via conductors embedded in a

glass dielectric, which acts as the low dispersion,

low loss, microstrip transmission medium. The

combination of silicon and glass allows HMIC

devices to have excellent loss and power dissipation

characteristics in a low profile, reliable device.

The Surmount Schottky devices are excellent

choices for circuits requiring the small parasitics of a

beam lead device coupled with the superior

mechanical performance of a chip. The SurMount

structure employs very low resistance silicon vias to

connect the Schottky contacts to the metalized

mounting pads on the bottom surface of the chip.

These devices are reliable, repeatable, and a lower

cost performance solution to conventional devices.

They have lower susceptibility to electrostatic dis-

charge than conventional beam lead Schottky

diodes.

The multi-layer metalization employed in the

fabrication of the Surmount Schottky junctions

includes a platinum diffusion barrier, which permits

all devices to be subjected to a 16-hour

non-operating stabilization bake at 300°C.

The “0502” outline allows for Surface Mount

placement and multi- functional polarity orientations.

Case Style 1112

AA

B

D

E

C

D

Case Style 1112

DIM

A

B

C

D Sq.

E

INCHES

MIN.

MAX.

0.0445 0.0465

0.0169 0.0189

0.0040 0.0080

0.0128 0.0148

0.0128 0.0148

MILLIMETERS

MIN.

MAX.

1.130

1.180

0.430

0.480

0.102

0.203

0.325

0.375

0.325

0.375

Equivalent Circuit

1

M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

Visit www.macom.com for additional data sheets and product information.

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