MAC12MG 查看數據表（PDF） - ON Semiconductor
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MAC12MG Datasheet PDF : 6 Pages
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MAC12D, MAC12M, MAC12N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
Symbol
RqJC
RqJA
TL
Value
2.2
62.5
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted; Electricals apply in both directions)
Characteristic
Symbol Min Typ Max
OFF CHARACTERISTICS
Peak Repetitive Blocking Current
(VD = Rated VDRM, VRRM, Gate Open)
ON CHARACTERISTICS
TJ = 25°C
TJ = 125°C
IDRM,
IRRM
−
− 0.01
−
−
2.0
Peak On−State Voltage (Note 2) (ITM = "17 A)
Gate Trigger Current (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VTM
−
− 1.85
IGT
5.0
13
35
5.0
13
35
5.0
13
35
Hold Current (VD = 12 V, Gate Open, Initiating Current = "150 mA)
Latch Current (VD = 24 V, IG = 35 mA)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
IH
−
20
40
IL
−
20
50
−
30
80
−
20
50
Gate Trigger Voltage (Continuous dc) (VD = 12 V, RL = 100 W)
MT2(+), G(+)
MT2(+), G(−)
MT2(−), G(−)
VGT
0.5 0.78 1.5
0.5 0.70 1.5
0.5 0.71 1.5
DYNAMIC CHARACTERISTICS
Rate of Change of Commutating Current
(VD = 400 V, ITM = 4.4A, Commutating dv/dt = 18 V/ms, Gate Open,
TJ = 125°C, f = 250 Hz, No Snubber)
Critical Rate of Rise of Off−State Voltage
(VD = Rated VDRM, Exponential Waveform, Gate Open, TJ = 125°C)
Repetitive Critical Rate of Rise of On-State Current
IPK = 50 A; PW = 40 msec; diG/dt = 200 mA/msec; f = 60 Hz
2. Pulse Test: Pulse Width ≤ 2.0 ms, Duty Cycle ≤ 2%.
(di/dt)c
6.5
−
−
dv/dt
di/dt
250 500
−
−
−
10
Unit
mA
V
mA
mA
mA
V
A/ms
V/ms
A/ms
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