MBM29F017A-12 查看數據表（PDF） - Fujitsu

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MBM29F017A-12

FLASH MEMORY CMOS 16M (2M × 8) BIT

Fujitsu 

s PRODUCT LINE UP

Part No.

Ordering Part No.

VCC = 5.0 V ±5%

VCC = 5.0 V ±10%

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

s BLOCK DIAGRAM

MBM29F017A-70/-90/-12

MBM29F017A

-70

—

—

—

-90

-12

70

90

120

70

90

120

40

40

50

VCC

VSS

WE

RESET

CE

OE

RY/BY

Buffer

RY/BY

Erase Voltage

Generator

DQ0 to DQ7

Input/Output

Buffers

State

Control

Command

Register

Program Voltage

Generator

Chip Enable

Output Enable

Logic

STB Data Latch

A0 to A20

STB

Y-Decoder

Low VCC Detector

Timer for

Program/Erase

Address

Latch

X-Decoder

Y-Gating

Cell Matrix

5

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