MBM29LV001BC-55 查看數據表（PDF） - Fujitsu

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MBM29LV001BC-55

FLASH MEMORY CMOS 1M (128K × 8) BIT

Fujitsu 

MBM29LV001TC-55/-70/MBM29LV001BC-55/-70

s PRODUCT LINE UP

Part No.

Ordering Part No.

VCC = 3.3 V

+0.3 V

–0.3 V

VCC = 3.0 V

+0.6 V

–0.3 V

Max. Address Access Time (ns)

Max. CE Access Time (ns)

Max. OE Access Time (ns)

s BLOCK DIAGRAM

MBM29LV001TC/MBM29LV001BC

-55

—

—

-70

55

70

55

70

25

30

VCC

VSS

WE

RESET

CE

OE

DQ 0 to DQ 7

Erase Voltage

Generator

Input/Output

Buffers

State

Control

Command

Register

Program Voltage

Generator

Chip Enable

Output Enable

STB

Data Latch

Logic

A0 to A16

STB

Y-Decoder

Low VCC Detector

Timer for

Program/Erase

Address

Latch

X-Decoder

Y-Gating

Cell Matrix

5

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