MC100EP35DTR2 查看數據表（PDF） - ON Semiconductor
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MC100EP35DTR2 Datasheet PDF : 11 Pages
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MC10EP35, MC100EP35
Table 5. 10EP DC CHARACTERISTICS, PECL VCC = 3.3 V, VEE = 0 V (Note 2)
−40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 3)
VOL
Output LOW Voltage (Note 3)
VIH
Input HIGH Voltage (Single−Ended)
VIL
Input LOW Voltage (Single−Ended)
IIH
Input HIGH Current
IIL
Input LOW Current
30
40
50
30
40
50
30
40
50 mA
2165 2290 2415 2230 2355 2480 2290 2415 2540 mV
1365 1490 1615 1430 1555 1680 1490 1615 1740 mV
2090
2415 2155
2480 2215
2540 mV
1365
1690 1460
1755 1490
1815 mV
150
150
150 mA
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
2. Input and output parameters vary 1:1 with VCC. VEE can vary +0.3 V to −2.2 V.
3. All loading with 50 W to VCC − 2.0 V.
Table 6. 10EP DC CHARACTERISTICS, PECL VCC = 5.0 V, VEE = 0 V (Note 4)
−40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
VOH
Output HIGH Voltage (Note 5)
VOL
Output LOW Voltage (Note 5)
VIH
Input HIGH Voltage (Single−Ended)
VIL
Input LOW Voltage (Single−Ended)
IIH
Input HIGH Current
IIL
Input LOW Current
30
40
50
30
40
50
30
40
50 mA
3865 3940 4115 3930 4055 4180 3990 4115 4240 mV
3065 3190 3315 3130 3255 3380 3190 3315 3440 mV
3790
4115 3855
4180 3915
4240 mV
3065
3390 3130
3455 3190
3515 mV
150
150
150 mA
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
4. Input and output parameters vary 1:1 with VCC. VEE can vary +2.0 V to −0.5 V.
5. All loading with 50 W to VCC − 2.0 V.
Table 7. 10EP DC CHARACTERISTICS, NECL VCC = 0 V; VEE = −5.5 V to −3.0 V (Note 6)
−40°C
25°C
85°C
Symbol
Characteristic
Min Typ Max Min Typ Max Min Typ Max Unit
IEE
Power Supply Current
30
40
50
30
40
50
30
40
50 mA
VOH
Output HIGH Voltage (Note 7)
−1135 −1010 −885 −1070 −945 −820 −1010 −885 −760 mV
VOL
Output LOW Voltage (Note 7)
−1935 −1810 −1685 −1870 −1745 −1620 −1810 −1685 −1560 mV
VIH
Input HIGH Voltage (Single−Ended)
−1210
−885 −1145
−820 −1085
−760 mV
VIL
Input LOW Voltage (Single−Ended)
−1935
−1610 −1870
−1545 −1810
−1485 mV
IIH
Input HIGH Current
150
150
150 mA
IIL
Input LOW Current
0.5
0.5
0.5
mA
NOTE: Device will meet the specifications after thermal equilibrium has been established when mounted in a test socket or printed circuit
board with maintained transverse airflow greater than 500 lfpm. Electrical parameters are guaranteed only over the declared
operating temperature range. Functional operation of the device exceeding these conditions is not implied. Device specification limit
values are applied individually under normal operating conditions and not valid simultaneously.
6. Input and output parameters vary 1:1 with VCC.
7. All loading with 50 W to VCC − 2.0 V.
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