MJE13009D 查看數據表（PDF） - Unisonic Technologies

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MJE13009D

NPN SILICON TRANSISTOR

Unisonic Technologies 

MJE13009D

NPN SILICON TRANSISTOR

„ SWITCHING CHARACTERISTICS

RESISTIVE LOAD

Delay Time

Rise Time

Storage Time

Fall Time

tD

tR

VCC=125V, IC=8A, IB1=IB2=1.6A,

tS

tP=25μs, Duty Cycle≤1%

tF

INDUCTIVE LOAD, CLAMPED

Voltage Storage Time

Crossover Time

tS

IC=8A, VCLAMP=300V,IB1=1.6A,

tC

VBE(OFF)=5V, TC=100°C

Note: Pulse Test: Pulse Width=300μs, Duty Cycle=2%.

0.06 0.1 μs

0.45 1 μs

1.3 3 μs

0.2 0.7 μs

0.92 2.3 μs

0.12 0.7 μs

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

3 of 5

QW-R203-041.A

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