MJF31C 查看數據表（PDF） - ON Semiconductor
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MJF31C Datasheet PDF : 5 Pages
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MJF31C (NPN),
MJF32C (PNP)
Preferred Device
Complementary Silicon
Plastic Power Transistors
for Isolated Package
Applications
Designed for use in general purpose amplifier and switching
applications.
Features
• Collector−Emitter Saturation Voltage −
VCE(sat) = 1.2 Vdc (Max) @ IC = 3.0 Adc
• Collector−Emitter Sustaining Voltage −
VCEO(sus) = 100 Vdc (Min)
• High Current Gain − Bandwidth Product
fT = 3.0 MHz (Min) @ IC = 500 mAdc
• UL Recognized, File #E69369, to 3500 VRMS Isolation
• Pb−Free Packages are Available*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Rating
Symbol Value
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Emitter Voltage
VCEO
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector−Base Voltage
VCB
100
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Emitter−Base Voltage
VEB
5.0
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Collector CurrentUnclamped Inductive
IC
Adc
Load Energy (Note 1)
3.0
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ − Continuous
5.0
− Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Base Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Derate above 25_C
IB
1.0
Adc
PD
28
W
0.22
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Total Power Dissipation @ TA = 25_C
Derate above 25_C
PD
2.0
W
0.016
W/_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Unclamped Inductive Load Energy (Note 1)
E
32
mJ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Operating and Storage Junction
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Temperature Range
TJ, Tstg –65 to +150 _C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, Junction−to−Ambient RqJC
62.5
°C/W
Thermal Resistance, Junction−to−Case
RqJC
4.46
°C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. IC = 1.8 A, L = 20 mH, P.R.F. = 10 Hz, VCC = 10 V, RBE = 100 W.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2008
1
July, 2008 − Rev. 5
http://onsemi.com
3.0 AMPERE
POWER TRANSISTORS
COMPLEMENTARY SILICON
100 VOLTS, 28 WATTS
4
TO−220 FULLPAK
CASE 221D
STYLE 2
1
23
MARKING DIAGRAM
MJF3xCG
AYWW
x = 1 or 2
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
ORDERING INFORMATION
Device
MJF31C
MJF31CG
MJF32C
MJF32CG
Package
TO−220 FULLPAK
TO−220 FULLPAK
(Pb−Free)
TO−220 FULLPAK
TO−220 FULLPAK
(Pb−Free)
Shipping
50 Units/Rail
50 Units/Rail
50 Units/Rail
50 Units/Rail
Preferred devices are recommended choices for future use
and best overall value.
Publication Order Number:
MJF31C/D
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