MMBT5088L 查看數據表（PDF） - ON Semiconductor
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MMBT5088L Datasheet PDF : 5 Pages
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MMBT5088L, MMBT5089L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 1.0 mAdc, IB = 0)
V(BR)CEO
MMBT5088L
30
MMBT5089L
25
Vdc
−
−
Collector −Base Breakdown Voltage
(IC = 100 mAdc, IE = 0)
Collector Cutoff Current
(VCB = 20 Vdc, IE = 0)
(VCB = 15 Vdc, IE = 0)
Emitter Cutoff Current
(VEB(off) = 3.0 Vdc, IC = 0)
(VEB(off) = 4.5 Vdc, IC = 0)
ON CHARACTERISTICS
DC Current Gain
(IC = 100 mAdc, VCE = 5.0 Vdc)
V(BR)CBO
MMBT5088L
35
MMBT5089L
30
ICBO
MMBT5088L
−
MMBT5089L
−
IEBO
MMBT5088L
−
MMBT5089L
−
hFE
MMBT5088L
300
MMBT5089L
400
−
−
50
50
50
100
900
1200
Vdc
nAdc
nAdc
−
(IC = 1.0 mAdc, VCE = 5.0 Vdc)
MMBT5088L
MMBT5089L
350
−
450
−
(IC = 10 mAdc, VCE = 5.0 Vdc)
MMBT5088L
MMBT5089L
300
−
400
−
Collector −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
Base −Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
SMALL− SIGNAL CHARACTERISTICS
VCE(sat)
−
VBE(sat)
−
Vdc
0.5
Vdc
0.8
Current −Gain — Bandwidth Product
(IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz)
Collector−Base Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz emitter guarded)
Emitter−Base Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz collector guarded)
Small Signal Current Gain
(IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz)
fT
Ccb
Ceb
hfe
MMBT5088L
MMBT5089L
MHz
50
−
pF
−
4.0
pF
−
10
−
350
1400
450
1800
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 1.0 kHz)
NF
dB
MMBT5088L
−
3.0
MMBT5089L
−
2.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
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