TIP3055, 2955
Complementary Power Transistors
Thermal Characteristics
Characteristic
Thermal Resistance Junction to Case
Symbol
Rθjc
Figure - 1 Power Derating
Maximum
1.39
Unit
°C/W
TC, Temperature (°C)
Electrical Characteristics (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Minimum
OFF Characteristics
Collector-Emitter Sustaining Voltage (1)
(IC = 30mA, IB = 0)
Collector Cut off Current
(VCE = 70V, RBE= 100Ω)
Collector Cut off Current
(VCE = 30V, IB = 0)
Collector Cut off Current
(VCE = 100V, VBE(off) = 1.5V)
Emitter Cut off Current
(VEB = 7.0V, IC = 0)
ON Characteristics (1)
DC Current Gain
(IC = 4.0A, VCE = 4.0V)
(IC = 10A, VCE = 4.0V)
Collector-Emitter Saturation Voltage
(IC = 4.0A, IB = 0.4A)
(IC = 10A, IB = 3.3A)
Base-Emitter On Voltage
(IC = 4.0A, VCE = 4.0V)
Dynamic Characteristics
Current Gain Bandwidth Product
(IC = 500mA, VCE = 10V, f = 1.0MHz)
Small-Signal Current Gain
(IC = 1.0A, VCE = 4V, f = 1kHz)
(1) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤2.0%
(2) fT = hfe • ftest
VCEO(SUS)
60
ICER
-
ICEO
-
ICEV
-
IEBO
-
hFE
20
5.0
VCE(sat)
-
VBE(on)
-
fT
2.5
hfe
15
Maximum
-
1.0
0.7
5.0
100
1.1
3.0
1.8
-
-
Unit
V
mA
-
V
MHz
-
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31/05/05 V1.0