BDX18N 查看數據表（PDF） - Comset Semiconductors
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BDX18N Datasheet PDF : 3 Pages
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BDX18 – BDX18N
PNP SILICON TRANSISTOR EPITAXIAL BASE
LF Large Signal Power Amplification
High Current Switching
Thermal Fatigue Inspection
Compliance to RoHS
Applications :
•
•
•
•
Series and shunt regulators
High Fidelity Amplifiers
Power-switching circuits
Solenoid drivers
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCER
VEBO
VCBO
VCEX
IC
IB
PT
TJ
TS
Collector-Emitter Voltage
Collector-Emitter
Voltage
RBE=100Ω
Collector-Emitter Voltage
Emitter-Base Voltage
Collector-Emitter
Voltage
Collector Current
VBE=+1.5 V
Base Current
Power Dissipation
Junction Temperature
Storage Temperature
@ TC = 25°
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
BDX18
BDX18N
Value
-60
-70
-65
-7
-100
-70
-90
-70
-15
-7
117
-65 to +200
Unit
V
V
V
V
V
A
A
W
°C
05/10/2012
COMSET SEMICONDUCTORS
1|3
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