MMDT4146-7-F 查看數據表（PDF） - Diodes Incorporated.
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MMDT4146-7-F Datasheet PDF : 5 Pages
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350
300
250
200
150
100
50
RθJA = 625°C/W
0
0 25 50 75 100 125 150 175 200
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs.
Ambient Temperature (Total Device, Note 1)
10
1
0.1
0.01
1
10
100
1,000
IC, COLLECTOR CURRENT (mA)
Fig. 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
100
MMDT4146
1,000
100
10
1
0.1
1.0
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 2 Typical DC Current Gain
vs. Collector Current (PNP-4126)
1,000
0.9
0.8
0.7
0.6
IC
IB= 10
0.5
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Base-Emitter Saturation Voltage
vs. Collector Current (PNP-4126)
1,000
100
10
10
1
1
0.1
1
10
100
0.1
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Capacitance Characteristics (PNP-4126)
MMDT4146
Document number: DS30162 Rev. 11 - 2
3 of 5
www.diodes.com
1
10
100
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical DC Current Gain
vs. Collector Current (NPN-4124)
1,000
January 2009
© Diodes Incorporated
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