MPF102 查看數據表（PDF） - ON Semiconductor

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MPF102

JFET VHF Amplifier

ON Semiconductor 

MPF102

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

OFF CHARACTERISTICS

Gate −Source Breakdown Voltage

(IG = −10 mAdc, VDS = 0)

Gate Reverse Current

(VGS = −15 Vdc, VDS = 0)

(VGS = −15 Vdc, VDS = 0, TA = 100°C)

Gate −Source Cutoff Voltage

(VDS = 15 Vdc, ID = 2.0 nAdc)

Gate −Source Voltage

(VDS = 15 Vdc, ID = 0.2 mAdc)

ON CHARACTERISTICS

Zero −Gate −Voltage Drain Current (Note 1)

(VDS = 15 Vdc, VGS = 0 Vdc)

SMALL− SIGNAL CHARACTERISTICS

Forward Transfer Admittance (Note 1)

(VDS = 15 Vdc, VGS = 0, f = 1.0 kHz)

(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Input Admittance

(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Output Conductance

(VDS = 15 Vdc, VGS = 0, f = 100 MHz)

Input Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

Reverse Transfer Capacitance

(VDS = 15 Vdc, VGS = 0, f = 1.0 MHz)

1. Pulse Test; Pulse Width v 630 ms, Duty Cycle v 10%.

Symbol

Min

Max

Unit

V(BR)GSS

IGSS

VGS(off)

VGS

− 25

−

−

−2.0

−

− 2.0

−

− 8.0

−0.5 −7.5

Vdc

nAdc

mAdc

Vdc

Vdc

IDSS

2.0

20

mAdc

⎪yfs⎟

Re(yis)

Re(yos)

Ciss

Crss

2000

1600

7500

−

−

800

−

200

−

7.0

−

3.0

mmhos

mmhos

mmhos

pF

pF

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