MRF19085R3 查看數據表（PDF） - Motorola => Freescale

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MRF19085R3

RF Power Field Effect Transistors

Motorola => Freescale 

Freescale Semiconductor, Inc.

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain - Source Breakdown Voltage

(VGS = 0 Vdc, ID = 100 µAdc)

Zero Gate Voltage Drain Current

(VDS = 26 Vdc, VGS = 0 Vdc)

Gate - Source Leakage Current

(VGS = 5 Vdc, VDS = 0 Vdc)

V(BR)DSS

65

—

—

Vdc

IDSS

—

—

10

µAdc

IGSS

—

—

1

µAdc

ON CHARACTERISTICS (DC)

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 200 µAdc)

Gate Quiescent Voltage

(VDS = 26 Vdc, ID = 850 mAdc)

Drain - Source On - Voltage

(VGS = 10 Vdc, ID = 2 Adc)

Forward Transconductance

(VDS = 10 Vdc, ID = 2 Adc)

VGS(th)

2

VGS(Q)

2.5

VDS(on)

—

gfs

—

—

4

Vdc

3.5

4.5

Vdc

0.18

0.210

Vdc

6

—

S

DYNAMIC CHARACTERISTICS

Reverse Transfer Capacitance (1)

(VDS = 26 Vdc, VGS = 0, f = 1.0 MHz)

Crss

—

3.6

—

pF

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carriers.

Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF.

Common - Source Amplifier Power Gain

(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)

Gps

12

13

—

dB

Drain Efficiency

(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)

η

21

23

—

%

3rd Order Intermodulation Distortion

IMD

(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); IM3 measured

over 1.2288 MHz bandwidth @ f1 - 2.5 MHz and f2 = +2.5 MHz)

—

- 36.5

- 35

dBc

Adjacent Channel Power Ratio

ACPR

—

(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz); ACPR

measured over 30 kHz bandwidth @ f1 - 885 MHz and f2 =+885 MHz)

- 51

- 48

dBc

Input Return Loss

(VDD = 26 Vdc, Pout = 18 W Avg., IDQ = 850 mA, f1 = 1930 MHz,

f2 = 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz)

IRL

—

- 12

-9

dB

Output Mismatch Stress

Ψ

(VDD = 26 Vdc, Pout = 90 W CW, IDQ = 850 mA, f = 1930 MHz, VSWR

= 5:1, All Phase Angles at Frequency of Tests)

No Degradation In Output Power

Before and After Test

(1) Part is internally matched both on input and output.

MRF19085R3 MRF19085LR3 MRF19085SR3 MRF19085LSR3

MOTOROLA RF DEVICE DATA

2

For More Information On This Product,

Go to: www.freescale.com

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