1Semiconductor
This Version: Dec.2000
FEDD514800ESL-01
MSM514800E/ESL
DC Characteristics
(VCC = 5V ± 10%, Ta = 0°C to 70°C)
Parameter
Output High Voltage
Output Low Voltage
Input Leakage Current
Symbol
Condition
VOH IOH = −5.0mA
VOL IOL = 4.2mA
0V ≤ VI ≤ 6.5V ;
ILI All other pins not
under test = 0V
MSM514800
E/ESL-60
Min.
2.4
0
Max.
VCC
0.4
MSM514800
E/ESL-70
Min.
2.4
0
Max.
VCC
0.4
Unit Note
V
V
−10
10
−10
10
µA
Output Leakage Current
ILO
DQ disable
0V ≤ VO ≤ 5.5V
−10
10
−10
10
µA
Average Power Supply
Current (Operating)
ICC1
RAS, CAS cycling,
tRC = Min.
100
90
mA 1,2
Power Supply Current
(Standby)
Average Power Supply
Current
(RAS-only Refresh)
Power Supply Current
(Standby)
RAS, CAS = VIH
ICC2 RAS, CAS ≥
VCC – 0.2V
RAS cycling,
ICC3 CAS = VIH,
tRC = Min.
RAS = VIH,
ICC5 CAS = VIL,
DQ = enable
2
2
mA
1
1
1
200
200
µA
1,5
100
90
mA 1,2
5
5
mA
1
Average Power Supply
Current
(CAS before RAS Refresh)
ICC6
RAS = cycling,
CAS before RAS
100
90
mA 1,2
Average Power Supply
Current (Fast Page Mode)
RAS = VIL,
ICC7 CAS cycling,
tPC = Min.
95
85
mA 1,3
Average Power Supply
Current (Battery Backup)
tRC = 125µs,
ICC10 CAS before RAS,
300
300
µA 1,4,5
tRAS ≤ 1µs
Average Power Supply
Current (CAS before RAS
Self-Refresh)
ICCS
RAS ≤ 0.2V,
CAS ≤ 0.2V
300
300
µA
1,5
Notes: 1.
2.
3.
4.
5.
ICC Max. is specified as ICC for output open condition.
The address can be changed once or less while RAS = VIL.
The address can be changed once or less while CAS = VIH.
VCC − 0.2V ≤ VIH ≤ 6.5V, − 1.0V ≤ VIL ≤ 0.2V.
SL version.
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