RX1214B170W 查看數據表（PDF） - Philips Electronics

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RX1214B170W

Microwave power transistor

Philips Electronics 

Philips Semiconductors

Microwave power transistor

Product specification

RX1214B170W

THERMAL CHARACTERISTICS

SYMBOL

Rth j-mb

Rth mb-h

Zth

PARAMETER

CONDITIONS

thermal resistance from junction to mounting base Tj = 120 °C

thermal resistance from mounting base to heatsink note 1

thermal impedance from junction to heatsink

tp = 500 µs; δ = 10%;

notes 1 and 2

Notes

1. See “Mounting recommendations in the General part of handbook SC19a”.

2. Equivalent thermal impedance under pulsed microwave operating conditions.

MAX.

1.9

0.2

0.28

UNIT

K/W

K/W

K/W

CHARACTERISTICS

Tmb = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

ICBO

IEBO

V(BR)CES

collector cut-off current

emitter cut-off current

collector-emitter breakdown voltage

CONDITIONS

IE = 0; VCB = 50 V

IC = 0; VEB = 1.5 V

IC = 60 mA; VBE = 0

MIN.

−

−

65

MAX.

20

2

−

UNIT

mA

mA

V

APPLICATION INFORMATION

Microwave performance up to Tmb = 25 °C in a common-base test circuit as shown in Fig.3; note 1.

MODE OF

OPERATION

CONDITIONS

f

VCC

(GHz)

(V)

PL

(W)

Gp

(dB)

Class C

tp = 500 µs; δ = 10%

1.2 to 1.4

42

170

≥6.7

typ. 7.2

Note

1. Equivalent thermal impedance under pulsed microwave operating conditions.

ηC

(%)

≥40

typ. 45

1997 Feb 18

4

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