N0603N-S23-AY(2020) 查看數據表（PDF） - Renesas Electronics
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N0603N-S23-AY Datasheet PDF : 7 Pages
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N0603N
N-channel MOSFET
60 V, 100 A, 4.6 mΩ
Preliminary Data Sheet
R07DS0559EJ0200
Rev.2.00
2020.06.10
Features
• Low on-state resistance : RDS (on) = 4.6 mΩ MAX. (VGS = 10 V, ID = 50 A)
• Low Ciss : Ciss = 7730 pF TYP. (VDS = 25 V, VGS = 0 V)
• High current : ID(DC) = ±100 A
• RoHS Compliant
• Quality Grade : Standard
• Applications : For high current switching
Ordering Information
Part No.
N0603N-S23-AY
Package
TO-262, Pb-free Note1
Packing
50 pcs / Magazine (Tube)
Note: 1. Pb-free means that this product does not contain lead in the external electrode.
Absolute Maximum Ratings (TA = 25°C)
Item
Symbol
Ratings
Unit
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±100
A
Drain Current (pulse) Note2
ID(pulse)
±400
A
Total Power Dissipation (TC = 25°C)
PT1
156
W
Total Power Dissipation (TA = 25°C)
PT2
1.5
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
−55 to +150
°C
Single Avalanche Current Note3
IAS
55
A
Single Avalanche Energy Note3
EAS
300
mJ
Note: Continuous heavy condition (e.g. high temperature/voltage/current or high variation of temperature) may affect a
reliability even if it is within the absolute maximum ratings. Please consider derating condition for appropriate
reliability in reference Renesas Semiconductor Reliability Handbook (Recommendation for Handling and Usage of
Semiconductor Devices) and individual reliability data.
Notes: 2. PW ≤ 10 µs, Duty Cycle ≤ 1%
3. Starting Tch = 25°C, RG = 25 Ω, VDD = 30 V, VGS = 20 → 0 V, L = 100 µH
Thermal Resistance
Item
Symbol
Max. Value Note4
Unit
Channel to Case Thermal Resistance
Rth(ch-C)
0.80
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
Notes: 4. This data is the designed target maximum value on Renesas’s measurement condition. (Not tested)
R07DS0559EJ0200 Rev.2.00
2020.6.10
Page 1 of 6
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