N0604N 查看數據表（PDF） - Renesas Electronics

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产品描述 (功能)

生产厂家

N0604N

N-channel MOSFET 60 V, 82 A, 6.5 mΩ

Renesas Electronics 

N0604N

Package Drawing (Unit: mm)

TO-220

10.2 MAX.

8.7 TYP.

3.6±0.2

4.8 MAX.

1.3±0.2

4

1.52±0.2

0.8±0.1

2.54 TYP.

0.5±0.2

2.54 TYP.

2.4±0.2

123

1. Gate

2. Drain

3. Source

4. Fin (Drain)

Chapter Title

Equivalent Circuit

Gate

Drain

Body

Diode

Source

Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and

ultimately degrade the device operation. Steps must be taken to stop generation of static

electricity as much as possible, and quickly dissipate it once, when it has occurred.

R07DS0850EJ0100 Rev.1.00

Aug 27, 2012

Page 6 of 6

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