NB3N511 查看數據表（PDF） - ON Semiconductor
零件编号
产品描述 (功能)
生产厂家
NB3N511 Datasheet PDF : 6 Pages
| |||
NB3N511
Table 4. ATTRIBUTES
Characteristics
ESD Protection
Human Body Model
Machine Model
Charged Device Model
RPU − OE Input Pull−up Resistor
Moisture Sensitivity (Note 1)
SOIC−8
Flammability Rating
Oxygen Index: 28 to 34
Transistor Count
Meets or exceeds JEDEC Spec EIA/JESD78 IC Latchup Test
1. For additional information, see Application Note AND8003/D.
Value
> 1 kV
> 150 V
> 1 kV
270 kW
Level 1
UL 94 V 0 @ 0.125 in
9555
Table 5. MAXIMUM RATINGS
Symbol
Parameter
Condition 1 Condition 2
Rating
Unit
VDD
Positive Power Supply
GND = 0 V
7
V
VIO
Input and Output Voltages
−0.5 V v VIO v VDD + 0.5 V
TA
Operating Temperature Range
−40 to +85
°C
Tstg
Storage Temperature Range
−65 to +150
°C
qJA
Thermal Resistance (Junction−to−Ambient)
0 lfpm
500 lfpm
SOIC−8
SOIC−8
190
°C/W
130
qJC
Thermal Resistance (Junction−to−Case)
(Note 2)
SOIC−8
41 to 44
°C/W
Tsol
Wave Solder
Pb−Free
265
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
2. JEDEC standard multilayer board − 2S2P (2 signal, 2 power) with 8 filled thermal vias under exposed pad.
http://onsemi.com
3
Share Link: 