NCP1395D 查看數據表（PDF） - ON Semiconductor

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NCP1395D

High Performance Resonant Mode Controller

ON Semiconductor 

NCP1395A/B

ELECTRICAL CHARACTERISTICS (For typical values Tj = 25°C, for min/max values Tj = 0°C to +125°C, Max TJ = 150°C,

VCC = 11 V, unless otherwise noted.)

Characteristic

Pin

Symbol

Min

Typ Max

SUPPLY SECTION

Turn−On Threshold Level, VCC Going Up – A Version

Turn−On Threshold Level, VCC Going Up – B Version

Minimum Operating Voltage after Turn−On

Minimum Hysteresis between VCCON and VCC(min) − A Version

Minimum Hysteresis between VCCON and VCC(min) − B Version

Startup Current, VCC < VCCON

VCC Level at which the Internal Logic gets Reset

Internal IC Consumption, No Output Load on Pins 11/12, Fsw = 300 kHz

12

VCCON

12.3 13.3 14.3

12

VCCON

9.3

10.3 11.3

12

VCC(min)

8.3

9.3 10.3

12

VhysteA

−

3.0

−

12

VhysteB

−

1.0

−

12

Istartup

−

−

300

12

VCCreset

−

5.9

−

12

ICC1

−

1.6

−

Internal IC consumption, 100 pF output load on pin 11 / 12, Fsw = 300 kHz

12

ICC2

−

2.3

−

Consumption in fault mode (All drivers disabled, Vcc > VCC(min) )

VOLTAGE CONTROL OSCILLATOR (VCO)

Minimum Switching Frequency, Rt = 120 kW on Pin 1, Vpin 5 = 0 V,

DT = 300 ns

12

ICC3

−

1.3

−

1

Fsw min

48.5

50 51.5

Maximum Switching Frequency, Rfmax = 22 kW on Pin 2, Vpin 5 >

6.0 V, DT = 300 ns − Tj = 25°C (Note 3)

Feedback Pin Swing above which Df = 0

2

Fsw max

0.9

1.0 1.11

5

FBSW

−

6.0

−

VCO VCC Rejection, DVCC = 1.0 V, in Percentage of Fsw

Operating Duty Cycle

−

11−10

PSRR

DC

−

0.2

−

48

50

52

Reference Voltage for all Current Generations (Fosc, DT)

1, 3

VREF

1.86

2.0

2.14

Delay before any Driver Restart in Fault Mode

−

Tdel

−

20

−

FEEDBACK SECTION

Internal Pulldown Resistor

5

Rfb

−

20

−

OTA Internal Offset Voltage

16

VREF_FB 2.325 2.5 2.675

Voltage on Pin 5 below which the FB Level has no VCO Action

5

Vfb_off

−

1.3

−

Voltage on Pin 5 below which the Controller Considers a Fault

5

Vfb_fault

−

0.6

−

Input Bias Current

16

IBias

−

−

100

DC Transconductance Gain

15

OTAG

−

250

−

Gain Product Bandwidth, Rload = 5.0 kW

15

GBW

−

1.0

−

DRIVE OUTPUT

Output Voltage Rise Time @ CL = 100 pF, 10−90% of Output Signal

11−10

Tr

−

Output Voltage Fall−Time @ CL = 100 pF, 10−90% of Output Signal

11−10

Tf

−

Source Resistance

11−10

ROH

20

Sink Resistance

11−10

ROL

30

Deadtime with RDT = 127 kW from Pin 3 to GND

3

T_dead

270

Maximum Deadtime with RDT = 540 kW from Pin 3 to GND

3 T_dead−max −

Minimum Deadtime, RDT = 30 kW from Pin 3 to GND

3

T_dead−min

−

3. Room temperature only, please look at characterization data for evolution versus junction temperature.

20

−

20

−

60

120

60

130

300 390

1.0

−

150

−

Unit

V

V

V

V

V

mA

V

mA

mA

mA

kHz

MHz

V

%/V

%

V

ms

kW

V

V

V

nA

mS

MHz

ns

ns

W

W

ns

ms

ns

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