NCV8606(2010) 查看數據表（PDF） - ON Semiconductor

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NCV8606
(Rev.:2010)

500 mA, Low IGND, CMOS LDO Regulator with/without Enable and with Enhanced ESD Protection

ON Semiconductor 

NCV8605, NCV8606

TYPICAL CHARACTERISTICS

Vout

100 mV/div

4.0 V

Vin = 2.5 V

Iout = 500 mA

Cout = 10 mF

trise = tfall = 1 ms

TA = 25°C

Vin

500 mV/div 3.0 V

TIME (20 ms/div)

Figure 21. Line Transient (Vout = 2.5 V)

Vout

1 V/div

Vout = 2.5 V

Iout = 0 mA

Cout = 10 mF

Vin

1 V/div

Vin = 3.0 V

trise = 1 ms

TA = 25°C

TIME (10 ms/div)

Figure 22. Startup Transient (Vout = 2.5 V)

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