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NDL7502PC

InGaAsP STRAINED MQW-DFB PULSED LASER DIODE MODULE FOR 1310 nm OTDR APPLICATION

NEC => Renesas Technology 

InGaAsP STRAINED MQW-DFB

PULSED LASER DIODE MODULE

FOR 1310 nm OTDR APPLICATION

NDL7502P

SERIES

FEATURES

• HIGH OUTPUT POWER:

Pf = 190 mW at IFP = 1000 mA1

• LONG WAVELENGTH:

λC = 1310 nm

• INTERNAL THERMOELECTRIC COOLER

• HERMETICALLY SEALED 14 PIN DUAL-IN-LINE PACKAGE

• SINGLE MODE FIBER PIGTAIL

Note:

1. Pulse Conditions: Pulse width (PW) = 10 µs, Duty = 1%.

DESCRIPTION

The NDL7502P Series is a newly developed strained Multiple

Quantum Well (st-MQW) structure pulse laser diode DIP

module with single mode fiber and internal thermoelectric

cooler. It is designed for light sources of optical measurement

equipment (OTDR). This module is also available with FC -

PC.

ELECTRO-OPTICAL CHARACTERISTICS (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)

PART NUMBER

NDL7502P Series

SYMBOLS

VFP

Pf

ITH

λC

σ

tr

tf

PARAMETERS AND CONDITIONS

Forward Voltage, IFP = 1000 mA, PW = 10 µs,

Duty = 1%

Optical Output Power from Fiber, IFP = 1000 mA,

I PW = 10 µs, Duty = 1%

Threshold Current

RMS Center Wavelength, IFP = 1000 mA, PW = 10 µs,

Duty = 1%

RMS Spectral Width, IFP = 1000 mA, PW = 10 µs,

Duty = 1%

Rise Time, 10-90%

Fall Time, 90-10%

UNITS

V

mW

mA

nm

nm

ns

ns

MIN

125

1290

TYP

2.5

190

35

1310

5.0

MAX

4.0

65

1330

10.0

2.0

2.0

ELECTRO-OPTICAL CHARACTERISTICS

APPLICABLE TO THERMISTOR AND TEC: (TLD = 25°C, TC = -20 to +65°C, unless otherwise specified)

PART NUMBER

NDL7502P Series

SYMBOLS

PARAMETERS AND CONDITIONS

UNITS

MIN

TYP

R1

Thernistor Resistance, TLD = 25°C

kΩ

9.5

10

IC

Cooler Current, ∆T = 40 K

A

0.6

VC

Cooler Voltage, ∆T = 40 K

V

1.1

∆T2

RMS Center Wavelength, IFP = 1000 mA, PW = 10 µs,

K

40

Notes:

1. B Constant: 3400 ± 100 K.

2. ∆T = | TC - TLD |.

MAX

10.5

1.0

1.5

California Eastern Laboratories

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