NE856 查看數據表（PDF） - California Eastern Laboratories.

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NE856

NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

California Eastern Laboratories. 

NE85618 NONLINEAR MODEL

SCHEMATIC

NE856 SERIES

CCBPKG

CCB

LBX

LB

Base

LC

CCE

Q1

LCX

Collector

CBEPKG

LE

CCEPKG

LEX

Emitter

BJT NONLINEAR MODEL PARAMETERS(1)

Parameters

Q1

Parameters

Q1

IS

BF

NF

VAF

IKF

ISE

NE

BR

NR

VAR

IKR

ISC

NC

RE

RB

RBM

IRB

RC

CJE

VJE

MJE

CJC

VJC

6e-16

120

0.98

10

0.08

3.2e-15

1.93

12

0.991

3.9

0.17

0

2

0.38

4.16

3.6

1.96e-4

2

2.8e-12

1.3

0.5

1.1e-12

0.7

(1) Gummel-Poon Model

MJC

XCJC

CJS

VJS

MJS

FC

TF

XTF

VTF

ITF

PTF

TR

EG

XTB

XTI

KF

AF

0.55

0.3

0

0.75

0

0.5

10e-12

6

10

0.2

0

1e-9

1.11

0

3

0

1

UNITS

Parameter

time

capacitance

inductance

resistance

voltage

current

Units

seconds

farads

henries

ohms

volts

amps

ADDITIONAL PARAMETERS

Parameters

CCB

CCE

LB

LC

LE

CCBPKG

CCEPKG

CBEPKG

LBX

LCX

LEX

NE85618

0.087e-12

0.16e-12

1.29e-9

1.04e-9

0.62e-9

0.054e-12

0.044e-12

0.33e-12

0.18e-9

0.41e-9

0.09e-9

MODEL RANGE

Frequency: 0.05 to 5.0 GHz

Bias:

Date:

VCE = 2.5 V to 10 V, IC = 3 mA to 10 mA

6/7/96

Note:

This nonlinear model utilized the latest data available. See our Design Parameter Library at www.cel.com for this data.

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