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NTE2996 查看數據表(PDF) - NTE Electronics

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NTE2996 Datasheet PDF : 3 Pages
1 2 3
Electrical Characteristics: (TJ = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
DrainSource Breakdown Voltage
BVDSS VGS = 0V, ID = 250µA
Breakdown Voltage Temperature
Coefficient
V(BR)DSS/ Reference to +25°C, ID = 1mA
TJ
Static DrainSource ON Resistance RDS(on) VGS = 10V, ID = 50A, Note 5
Gate Threshold Voltage
VGS(th) VDS = VGS, ID = 250µA
Forward Transconductance
gfs
VDS = 25V, ID = 50A, Note 5
DraintoSource Leakage Current
IDSS VDS = 60V, VGS = 0
VDS = 48V, VGS = 0V, TC = +150°C
GateSource Leakage, Forward
IGSS VGS = 20V
GateSource Leakage, Reverse
VGS = 20V
Total Gate Charge
Qg
VGS = 10V, ID = 50A, VDS = 48V
GateSource Charge
Qgs
GateDrain (“Miller”) Charge
Qgd
TurnOn Delay Time
Rise Time
td(on)
tr
VDD = 30V, ID = 50A, RG = 3.6,
VGS = 10V, Note 5
TurnOff Delay Time
td(off)
Fall Time
tf
Internal Drain Inductance
Internal Source Inductance
LD
Between lead, 6mm (0.25”) from
LS
package and center of die contact
Input Capacitance
Ciss VGS = 0V, VDS = 25V, f = 1MHz
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
SourceDrain Diode Ratings and Characteristics
60 − − V
0.064 V/°C
− − 12
2.0 4.0 V
69 − − mhos
− − 25 µA
− − 250 µA
− − 100 nA
− − −100 nA
− − 130 nC
− − 28 nC
− − 44 nC
12 ns
78 ns
48 ns
53 ns
4.5 nH
7.5 nH
3210 pF
690 pF
140 pF
Continuous Source Current
Pulse Source Current
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward TurnOn Time
IS
(Body Diode) Note 6
− − 84 A
ISM (Body Diode) Note 2
− − 330 A
VSD TJ = +25°C, IS = 50A, VGS = 0V, Note 5
1.3 V
trr
TJ = +25°C, IF = 50A, di/dt = 100A/µs, 73 110 ns
Qrr
Note 5
220 330 µC
ton
Intrinsic turnon time is neglegible
(turnon is dominated by LS + LD)
Note 2. Repetitive Rating: Pulse width limited by maximum junction temperature.
Note 5. Pulse Width 400µs, Duty Cycle 2%.
Note 6. Calculated continuous current based on maximum allowable junction temperature. Package
limitation current is 75A.

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