AM29LV800BB120WCIB 查看數據表（PDF） - Advanced Micro Devices

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AM29LV800BB120WCIB

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory

Advanced Micro Devices 

PRELIMINARY

AC CHARACTERISTICS

Enter

Embedded

Erasing

Erase

Suspend

Enter Erase

Suspend Program

WE#

Erase

Erase Suspend

Read

Erase

Suspend

Program

Erase

Resume

Erase Suspend

Read

Erase

DQ6

Erase

Complete

DQ2

Note: The system may use CE# or OE# to toggle DQ2 and DQ6. DQ2 toggles only when read at an address within an

erase-suspended sector.

21490E-25

Figure 21. DQ2 vs. DQ6

Temporary Sector Unprotect

Parameter

JEDEC Std

Description

tVIDR VID Rise and Fall Time (See Note)

Min

tRSP

RESET# Setup Time for Temporary Sector

Unprotect

Min

Note: Not 100% tested.

All Speed Options

500

4

Unit

ns

µs

12 V

RESET#

0 or 3 V

tVIDR

CE#

tVIDR

Program or Erase Command Sequence

0 or 3 V

WE#

tRSP

RY/BY#

Figure 22. Temporary Sector Unprotect Timing Diagram

21490E-26

34

Am29LV800B

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