F800BT90V 查看數據表（PDF） - Advanced Micro Devices

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F800BT90V

8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

Advanced Micro Devices 

DATA SHEET

DC CHARACTERISTICS

CMOS Compatible

Parameter

Description

Test Conditions

Min

Typ

Max

Unit

ILI

Input Load Current

VIN = VSS to VCC,

VCC = VCC max

ILIT

A9, OE#, RESET Input Load

Current

VCC = VCC max,

A9 = OE# = RESET = 12.5 V

±1.0

µA

35

µA

ILO

Output Leakage Current

ICC1

VCC Active Read Current

(Note 2)

VOUT = VSS to VCC,

VCC = VCC max

CE# = VIL, OE# = VIH,

f = 5 MHz

Byte Mode

CE# = VIL, OE# = VIH,

f = 5 MHz

Word Mode

±1.0

µA

20

40

mA

28

50

mA

ICC2

VCC Active Write Current

(Notes 1, 2, 3)

CE# = VIL, OE# = VIH

30

50

mA

ICC3

VCC Standby Current (Note 2)

CE# and RESET# = VCC±0.5 V,

OE# = VIH

0.3

5

µA

VIL

Input Low Voltage

–0.5

0.8

V

VIH

Input High Voltage

0.7 x VCC

VCC + 0.3 V

VID

Voltage for Autoselect and

Temporary Sector Unprotect

VCC = 5.0 V

11.5

12.5

V

VOL

VOH1

VOH2

VLKO

Output Low Voltage

Output High Voltage

Low VCC Lock-Out Voltage

(Note 3)

IOL = 5.8 mA, VCC = VCC min

IOH = –2.5 mA, VCC = VCC min

IOH = –100 µA, VCC = VCC min

0.85 VCC

VCC–0.4

3.2

0.45

V

V

V

4.2

V

Notes:

1. ICC active while Embedded Erase or Embedded Program is in progress.

2. Maximum ICC specifcations are tested with VCC = VCCmax

3. Not 100% tested.

November 2, 2006 21504E5

Am29F800B

25

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