PBYL3020CT 查看數據表（PDF） - Philips Electronics
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PBYL3020CT Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYL3025CT, PBYL3025CTB series
Forward dissipation, PF (W)
12
Vo = 0.32 V
Rs = 0.009 Ohms
10
PBYL3025CT Tmb(max) / C
126
D = 1.0
0.5
130
8
0.2
134
0.1
6
138
4
I
tp
D = tp 142
T
2
146
T
t
0
150
0
5
10
15
20
25
Average forward current, IF(AV) (A)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
Forward dissipation, PF (W) PBYL3025CT Tmb(max) / C
10
130
Vo = 0.32 V
Rs = 0.009 Ohms
8
1.9
2.2
a = 1.57
134
2.8
4
6
138
4
142
2
146
0
150
0
5
10
15
Average forward current, IF(AV) (A)
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
IF / A
30
25
Tj = 25 C
Tj = 125 C
20
PBYR2025CT
typ
max
15
10
5
0
0
Fig.3.
0.2
0.4
0.6
0.8
1
VF / V
Typical and maximum forward characteristic
IF = f(VF); parameter Tj
1A IR / A
100mA
10mA
1mA
100uA
Tj = 150 C
125
100
75
50
25
PBYR2025CT
10uA
0
5
10
15
20
25
VR / V
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
10000 Cd / pF
PBYR2025CT
1000
100
1
10
100
VR / V
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
10 Transient thermal impedance, Zth j-mb (K/W)
1
0.1
0.01
PD
tp
D
=
tp
T
0.001
1us
10us
T
t
100us 1ms 10ms 100ms 1s 10s
pulse width, tp (s)
PBYL3025CT
Fig.6. Transient thermal impedance per diode;
Zth j-mb = f(tp).
March 1998
3
Rev 1.000
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