PBYR20100CTB 查看數據表（PDF） - Philips Electronics
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PBYR20100CTB Datasheet PDF : 6 Pages
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Philips Semiconductors
Rectifier diodes
Schottky barrier
Product specification
PBYR20100CT, PBYR20100CTB series
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-mb
Rth j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package in free air
SOT404 package, pcb mounted, minimum
footprint, FR4 board
MIN.
-
-
-
-
TYP.
-
-
60
50
MAX. UNIT
2 K/W
1 K/W
- K/W
- K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
VF
Forward voltage
IR
Reverse current
Cd
Junction capacitance
IF = 10 A; Tj = 125˚C
IF = 20 A; Tj = 125˚C
IF = 20 A
VR = VRWM
VR = VRWM; Tj = 125˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP.
0.61
0.74
0.88
5
5
420
MAX. UNIT
0.7 V
0.85 V
0.95 V
150 µA
15 mA
- pF
November 1998
2
Rev 1.300
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