PF01412 查看數據表（PDF） - Hitachi -> Renesas Electronics

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PF01412

MOS FET Power Amplifier Module for E-GSM Handy Phone

Hitachi -> Renesas Electronics 

PF01412A

Electrical Characteristics (Tc = 25°C)

Item

Frequency range

Control voltage range

Drain cutoff current

Total efficiency

2nd harmonic distortion

3rd harmonic distortion

Input VSWR

Output power (1)

Output power (2)

Isolation

Switching time

Stability &

Load VSWR tolerance

Symbol

f

VAPC

I DS

ηT

2nd H.D.

3rd H.D.

VSWR (in)

Pout (1)

Pout (2)

—

tr, tf

—

Min Typ Max

890 —

915

0.5 —

3.0

—

—

100

40

45

—

—

–45 –35

—

–45 –35

—

1.5 3

3.8 4.5 —

2.5 3.2 —

—

–50 –40

—

1

2

No parasitic oscillation

&

No degradation

Unit

MHz

V

µA

%

dBc

dBc

—

W

W

dBm

µs

—

Test Condition

VDD = 10 V, VAPC = 0 V

Pin = 1 mW, VDD = 5.5 V,

Pout = 3.8 W, Vapc = controlled

RL = Rg = 50 Ω, Tc = 25°C

Pin = 1 mW, VDD = 5.5 V,

VAPC = 3.0 V, RL = Rg = 50 Ω,

Tc = 25°C

Pin = 1 mW, VDD = 5.0 V,

VAPC = 3.0 V, RL = Rg = 50 Ω,

Tc = 80°C

Pin = 1 mW, VDD = 5.5 V,

VAPC = 0.5 V, RL = Rg = 50 Ω,

Tc = 25°C

Pin = 1 mW, VDD = 5.5 V,

Pout = 3.8 W, RL = Rg = 50 Ω,

Tc = 25°C

Pin = 1 mW, VDD = 5 to 6 V,

Pout ≤ 3.8 W,

Vapc ≤ 3 V GSM pulse.

Rg = 50 Ω, t = 20 sec., Tc = 25°C,

Output VSWR = 6 : 1 All phases

2

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