BT136F-600 查看數據表（PDF） - Philips Electronics
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BT136F-600 Datasheet PDF : 7 Pages
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Philips Semiconductors
Triacs
Product specification
BT136F series
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT136F- ... ...F ...G
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max)V;
100 50 200 250
Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C;
-
commutating voltage
IT(RMS) = 4 A;
dIcom/dt = 1.8 A/ms; gate
open circuit
-
10 50
tgt
Gate controlled turn-on ITM = 6 A; VD = VDRM(max);
-
-
-
2
time
IG = 0.1 A; dIG/dt = 5 A/µs
- V/µs
- V/µs
-
µs
Ptot / W
8
BT136
Ths(max) / C
81
7
6
1
5
4
3
= 180
120
90
60
30
86.5
92
97.5
103
108.5
2
114
1
119.5
0
125
0
1
2
3
4
5
IT(RMS) / A
Fig.1. Maximum on-state dissipation, Ptot, versus rms
on-state current, IT(RMS), where α = conduction angle.
1000 ITSM / A
BT136
IT
ITSM
T
time
Tj initial = 125 C max
100
dIT/dt limit
T2- G+ quadrant
10
10us
100us
1ms
T/s
10ms
100ms
Fig.2. Maximum permissible non-repetitive peak
on-state current ITSM, versus pulse width tp, for
sinusoidal currents, tp ≤ 20ms.
30 ITSM / A
25
20
15
BT136
IT
ITSM
T
time
Tj initial = 125 C max
10
5
01
10
100
1000
Number of cycles at 50Hz
Fig.3. Maximum permissible non-repetitive peak
on-state current ITSM, versus number of cycles, for
sinusoidal currents, f = 50 Hz.
IT(RMS) / A
5
4
BT136X
92 C
3
2
1
0-50
0
50
100
150
Ths / C
Fig.4. Maximum permissible rms current IT(RMS) ,
versus heatsink temperature Ths.
February 1996
3
Rev 1.100
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