RD12MVS1(2006) 查看數據表（PDF） - Mitsumi
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| RD12MVS1 Datasheet PDF : 0 Pages | |||
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
MITSUBISHI RF POWER MOS FET
RD12MVS1
RoHS Compliance, Silicon MOSFET Power Transistor, 175MHz, 12W
TYPICAL CHARACTERISTICS
DRAIN DISSIPATION VS.
AMBIENT TEMPERATURE
60
*1:The material of the PCB
50
Glass epoxy (t=0.6 mm)
40
On PCB(*1) with Heat-sink
30
20
10
On PCB(*1)
Vgs-Ids CHARACTERISTICS
10
Ta=+25°C
Vds=10V
8
Ids
6
4
GM
2
0
0
40 80 120 160 200
AMBIENT TEMPERATURE Ta(°C)
0
01 23 45 67
Vgs(V)
Vds-Ids CHARACTERISTICS
9
Ta=+25°C
8
Vgs=7.5V
7
Vgs=6.0V
6
5
Vgs=5.5V
4
Vgs=5.0V
3
Vgs=4.5V
2
Vgs=4.0V
1
Vgs=3.5V
0
0
2
4
6
8
10
Vds(V)
Vds VS. Coss CHARACTERISTICS
120
100
Ta=+25°C
f=1MHz
80
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Ciss CHARACTERISTICS
160
140
Ta=+25°C
f=1MHz
120
100
80
60
40
20
0
0
5
10
15
20
Vds(V)
Vds VS. Crss CHARACTERISTICS
20
Ta=+25°C
18
f=1MHz
16
14
12
10
8
6
4
2
0
0
5
10
15
20
Vds(V)
RD12MVS1
MITSUBISHI ELECTRIC
2/7
10 Jan 2006
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