S3C1840 查看數據表（PDF） - Samsung

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产品描述 (功能)

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S3C1840

4-bit single-chip CMOS microcontroller

Samsung 

S3C1840

Table 1-4. DC Characteristics (Continued)

(VDD = 3 V, TA = 25 °C)

Parameters

High-Level Input Leakage Current

Low-level Input Leakage Current

High-level Output Leakage

Current

Pull-up Resistance of Input Port

Average Supply Current

HALT Current

Clock Frequency

Oscillator Frequency

Symbols Test Conditions

ILIH1

VI = VDD

All input pins

except XIN

ILIH2

XIN

ILIL1

XIN

ILOH

VO = VDD

R

IDD

IDDH

fxx

fOSC

All output pins

except P2.0

VDD = 3 V

VI = 0 V

VDD = 3 V

Crystal/resonator

Non-divide option

fOSC = 1 MHz

Dvide-8 option

fOSC = 6 MHz

fOSC = 0

Crystal/ceramic

Crystal/ceramic

Non-divide option

Crystal/ceramic

Divide-8 option

Min

–

–

– 0.6

–

30

–

–

250

250

2000

Typ Max Units

–

3

uA

3

10

– 3 – 10

–

3

uA

70

150

KΩ

0.5

1.0

mA

–

1.0

uA

–

1000 kHz

–

1000

6000

1-7

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