SII100N12 查看數據表（PDF） - Sirectifier Electronics
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SII100N12 Datasheet PDF : 7 Pages
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SII100N12
NPT IGBT Modules
Typ. gate charge
VGE = ƒ(QGate)
parameter: IC puls = 100 A
20
V
VGE 16
14
600 V
800 V
12
10
8
6
4
2
0
0 100 200 300 400 500 nC 700
QGate
T yp. c apac itanc es
C = f (VCE )
parameter: VG E = 0 V , f = 1 MHz
10 2
nF
C
10 1
C is s
10 0
C oss
C rss
10 -1
0
5 10 15 20 25 30 V 40
VCE
R evers e bias ed s afe operating area
IC puls = f(VC E ) , Tj = 150°C
parameter: VGE = 15 V
S hort c irc uit s afe operating area
IC sc = f(VC E ) , Tj = 150°C
parameter: VGE = ± 15 V , tS C ≤ 10 µs , L < 50 nH
2.5
12
IC puls/IC
1.5
1.0
0.5
IC sc/IC
8
6
4
2
0.0
0 200 400 600 800 1000 1200 V 1600
VCE
0
0 200 400 600 800 1000 1200 V 1600
VCE
SirectifierR
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