SMBT3904PN(2007) 查看數據表（PDF） - Infineon Technologies

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SMBT3904PN
(Rev.:2007)

NPN / PNP Silicon Switching Transistor Array

Infineon Technologies 

NPN / PNP Silicon Switching Transistor Array

• High current gain

• Low collector-emitter saturation voltage

• Two (galvanic) internal isolated NPN / PNP

transistor in one package

• Pb-free (RoHS compliant) package1)

• Qualified according AEC Q101

SMBT3904...PN

SMBT3904PN

SMBT3904UPN

C1

B2

E2

6

5

4

TR2

TR1

1

2

3

E1

B1

C2

EHA07177

Type

SMBT3904PN

SMBT3904UPN

Marking

Pin Configuration

Package

s3P 1=E 2=B 3=C 4=E 5=B 6=C SOT363

s3P 1=E 2=B 3=C 4=E 5=B 6=C SC74

Maximum Ratings

Parameter

Symbol

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage

Collector current

Total power dissipation-

TS ≤ 115 °C, SMBT3904PN

TS ≤ 105 °C, SMBT3904UPN

VCEO

VCBO

VEBO

IC

Ptot

Junction temperature

Tj

Storage temperature

Tstg

1Pb-containing package may be available upon special request

Value

Unit

40

V

40

6

200

mA

mW

250

330

150

°C

-65 ... 150

1

2007-03-28

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