UPD16837GS 查看數據表（PDF） - NEC => Renesas Technology

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UPD16837GS

MONOLITHIC QUAD H BRIDGE DRIVER

NEC => Renesas Technology 

µPD16837

The switching characteristics shown on the preceding pages are specified as follows (“output at one side” means

output B for H bridge output A, or output A for output B).

[Rise time]

Rise time when the output at one side is fixed to the low level (specified on current ON).

[Fall time]

Fall time when the output at one side is fixed to the high level (specified on current ON).

[Rising delay time]

Rising delay time when the output at one side is fixed to the low level (specified on current ON).

[Falling delay time]

Falling delay time when the output at one side is fixed to the high level (specified on current ON).

[Change in rising delay time]

Change (difference) in the rising delay time between when the output at one side is fixed to the low level and when

the output at the other side is fixed to the high level.

[Change in falling delay time]

Change (difference) in falling delay time between when the output at one side is fixed to the low level and when

the output at the other side is fixed to the high level.

[Rising delay time differential]

Difference in rising delay time between output A and output B.

[Falling delay time differential]

Difference in falling delay time between output A and output B.

Caution

Because this IC switches a high current at high speeds, surge may occur due to the VM and

GND wiring and inductance and degrade the performance of the IC.

On the PWB, keep the pattern width of the VM and GND lines as wide and short as possible,

and insert the bypass capacitors between VM and GND at a location as close to the IC as

possible.

Connect a low-inductance magnetic capacitor (4700 pF or more) and an electrolytic capacitor

of 10 µF or so, depending on the load current, in parallel.

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