SP0610T 查看數據表（PDF） - Siemens AG

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SP0610T

SIPMOS ® Small-Signal Transistor

Siemens AG 

SP 0610T

Drain-source on-resistance

RDS (on) = ƒ(Tj)

parameter: ID = -0.5 A, VGS = -10 V

24

Ω

20

RDS (on)

18

16

14

12

10

8

6

4

2

0

-60

-20

98%

typ

20

60

100 °C 160

Tj

Gate threshold voltage

VGS (th) = ƒ(Tj)

parameter: VGS = VDS, ID = -1 mA

-4.6

V

-4.0

VGS(th) -3.6

-3.2

-2.8

-2.4

98%

-2.0

typ

-1.6

-1.2

2%

-0.8

-0.4

0.0

-60

-20

20

60

100 °C 160

Tj

Typ. capacitances

C = f (VDS)

parameter:VGS=0V, f = 1 MHz

10 3

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

-10 0

pF

C

10 2

A

I

F

-10 -1

10 1

Ciss

Coss

Crss

10 0

0

-5 -10 -15 -20 -25 -30 V -40

VDS

Semiconductor Group

7

-10 -2

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

-10 -3

0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0

VSD

Sep-13-1996

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