J308 查看數據表（PDF） - Vishay Semiconductors
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J308 Datasheet PDF : 8 Pages
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J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Drain Current and Transconductance
vs. Gate-Source Cutoff Voltage
100
50
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
f = 1 kHz
80
40
10 nA
1 nA
Gate Leakage Current
IG @ ID = 10 mA
TA = 125_C
200 mA
60
30
gfs
40
IDSS
20
20
10
100 pA
IGSS @ 125_C
10 pA
1 pA
TA = 25_C
10 mA
200 mA
IGSS @ 25_C
0
0
−1
−2
−3
−4
VGS(off) − Gate-Source Cutoff Voltage (V)
0
−5
On-Resistance and Output Conductance
vs. Gate-Source Cutoff Voltage
100
300
80
240
60
rDS
gos
180
40
120
20
0
0
15
12
rDS @ ID = 1 mA, VGS = 0 V
gos @ VDS = 10 V, VGS = 0 V, f = 1 kHz
−1
−2
−3
−4
VGS(off) − Gate-Source Cutoff Voltage (V)
Output Characteristics
VGS(off) = −1.5 V
VGS = 0 V
60
0
−5
−0.2 V
9
−0.4 V
6
−0.6 V
3
−0.8 V
−1.0 V
0
0
0.2
0.4
0.6
0.8
1
VDS − Drain-Source Voltage (V)
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4
0.1 pA
0
3
6
9
12
15
VDG − Drain-Gate Voltage (V)
Common-Source Forward Transconductance
vs. Drain Current
20
VGS(off) = −3 V
VDS = 10 V
f = 1 kHz
16
TA = −55_C
12
8
25_C
4
125_C
0
0.1
1
10
ID − Drain Current (mA)
Output Characteristics
30
VGS(off) = −3 V
24
VGS = 0 V
18
12
6
0
0
−0.4 V
−0.8 V
−1.2 V
−1.6 V
−2.0 V
−2.4 V
0.2
0.4
0.6
0.8
1
VDS − Drain-Source Voltage (V)
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
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