J308 查看數據表（PDF） - Vishay Semiconductors
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J308 Datasheet PDF : 8 Pages
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J/SST/U308 Series
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
On-Resistance vs. Drain Current
100
80
Circuit Voltage Gain vs. Drain Current
100
gfs RL
AV + 1 ) RLgos
80
Assume VDD = 15 V, VDS = 5 V
VGS(off) = −1.5 V
60
60
RL
+
10 V
ID
40
VGS(off) = −3 V
20
0
1
10
100
ID − Drain Current (mA)
Common-Source Input Capacitance
vs. Gate-Source Voltage
15
f = 1 MHz
12
VDS = 0 V
9
6
40
VGS(off) = −1.5 V
20
VGS(off) = −3 V
0
0.1
1
10
ID − Drain Current (mA)
Common-Source Reverse Feedback Capacitance
vs. Gate-Source Voltage
10
f = 1 MHz
8
6
VDS = 0 V
4
3
VDS = 5 V
0
0
100
−4
−8
−12
−16
−20
VGS − Gate-Source Voltage (V)
Input Admittance vs. Frequency
2
VDS = 5 V
0
0
−4
−8
−12
−16
−20
VGS − Gate-Source Voltage (V)
Forward Admittance vs. Frequency
100
gig
10
big
1
TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate
0.1
100
200
500
f − Frequency (MHz)
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6
1000
−gfg
10
bfg
1
TA = 25_C
VDG = 10 V
ID = 10 mA
Common−Gate
0.1
100
200
500
f − Frequency (MHz)
1000
Document Number: 70237
S-50149—Rev. H, 24-Jan-05
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