STW30NF20 查看數據表（PDF） - STMicroelectronics

零件编号

产品描述 (功能)

生产厂家

STW30NF20

N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET™ Power MOSFET

STMicroelectronics 

STP30NF20 - STW30NF20 - STB30NF20

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM(1)

PTOT

dv/dt(2)

TJ

Tstg

Tl

Drain-source voltage (VGS = 0)

Gate-source voltage

Drain current (continuous) at TC = 25°C

Drain current (continuous) at TC=100°C

Drain current (pulsed)

Total dissipation at TC = 25°C

Derating factor

Peak diode recovery voltage slope

Operating junction temperature

Storage temperature

Maximum lead temperature for soldering

purpose

1. Pulse width limited by safe operating area

2. ISD ≤ 30A, di/dt ≤ 200A/µs, VDD = 80%V(BR)DSS

Value

200

±20

30

19

120

125

1

10

-55 to 150

300

Table 3. Thermal data

Symbol

Parameter

RthJC

RthJA

Thermal resistance junction-case max

Thermal resistance junction-ambient max

TO-220/

D²PAK

TO-247

1

62.5

50

Table 4. Avalanche data

Symbol

Parameter

IAR

Avalanche current, repetitive or not

repetitive (pulse width limited by Tjmax)

EAS

Single pulse avalanche energy (starting

Tj=25°C, ID=IAR, VDD=50V)

Value

30

140

Unit

V

V

A

A

A

W

W/°C

V/ns

°C

°C

Unit

°C/W

°C/W

Unit

A

mJ

3/16

Share Link: