STW30NF20 查看數據表（PDF） - STMicroelectronics

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STW30NF20

N-channel 200V - 0.065Ω - 30A - TO-220/TO-247/D2PAK Low gate charge STripFET™ Power MOSFET

STMicroelectronics 

Electrical characteristics

2

Electrical characteristics

STP30NF20 - STW30NF20 - STB30NF20

(TCASE=25°C unless otherwise specified)

Table 5. On/off states

Symbol

Parameter

V(BR)DSS

Drain-source breakdown

voltage

IDSS

Zero gate voltage drain

current (VGS = 0)

IGSS

Gate body leakage current

(VDS = 0)

VGS(th) Gate threshold voltage

RDS(on)

Static drain-source on

resistance

Test conditions

Min. Typ. Max. Unit

ID = 1mA, VGS= 0

200

VDS = Max rating,

VDS = Max rating,Tc=125°C

V

1 µA

10 µA

VGS = ±20V

±100 nA

VDS= VGS, ID = 250µA

VGS= 10V, ID= 15A

2

3

4

V

0.065 0.075 Ω

Table 6. Dynamic

Symbol

Parameter

Test conditions

gfs (1) Forward transconductance VDS =15V, ID = 15A

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25V, f=1 MHz, VGS=0

Qg Total gate charge

Qgs Gate-source charge

Qgd Gate-drain charge

VDD=160V, ID = 30A

VGS =10V

(see Figure 17)

1. Pulsed: pulse duration=300µs, duty cycle 1.5%

Min. Typ. Max. Unit

20

S

1597

pF

320

pF

43

pF

38

nC

8

nC

18

nC

4/16

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