D2NK60Z 查看數據表（PDF） - STMicroelectronics
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D2NK60Z
STMicroelectronics
D2NK60Z Datasheet PDF : 16 Pages
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STQ2NK60ZR-AP - STP2NK60Z - STF2NK60Z - STD2NK60Z-1
Table 3: Absolute Maximum ratings
Symbol
Parameter
VDS
Drain-source Voltage (VGS = 0)
VDGR
Drain-gate Voltage (RGS = 20 kΩ)
VGS
Gate- source Voltage
ID
Drain Current (continuous) at TC = 25°C
ID
Drain Current (continuous) at TC = 100°C
IDM ( ) Drain Current (pulsed)
PTOT
Total Dissipation at TC = 25°C
Derating Factor
VESD(G-S) Gate source ESD (HBM-C= 100pF, R=1.5kΩ)
VISO
Insulation Withstand Voltage (DC)
dv/dt (1) Peak Diode Recovery voltage slope
Tj
Operating Junction Temperature
Tstg
Storage Temperature
( ) Pulse width limited by safe operating area
(1) ISD ≤ 1.4A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Rthj-case
Rthj-amb
Rthj-lead
Tl
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Junction-lead Max
Maximum Lead Temperature For Soldering
Purpose
TO-220 /
IPAK
1.4
0.77
5.6
45
0.36
Value
TO-92
600
600
± 30
0.4
0.25
1.6
3
0.025
1500
4.5
-55 to 150
Unit
TO-220FP
1.4 (*)
0.77 (*)
5.6 (*)
20
0.16
2500
V
V
V
A
A
A
W
W/°C
V
V
V/ns
°C
TO-220/IPAK TO-220FP
2.77
6.25
100
100
--
--
300
TO-92
--
120
40
260
Unit
°C/W
°C/W
°C/W
°C
Table 5: Avalanche Characteristics
Symbol
Parameter
Max Value
Unit
IAR
Avalanche Current, Repetitive or Not-Repetitive
1.4
A
(pulse width limited by Tj max)
EAS
Single Pulse Avalanche Energy
(starting Tj = 25 °C, ID = IAR, VDD = 50 V)
90
mJ
Table 6: Gate-Source Zener Diode
Symbol
Parameter
Test Conditions
BVGSO
Gate source
Igs= ± 1 mA (Open Drain)
Breakdown Voltage
Min.
30
Typ.
Max.
Unit
V
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the Zener voltage is appropriate to achieve an efficient and
cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the
usage of external components.
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