STU40N2LH5(2008) 查看數據表（PDF） - STMicroelectronics

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STU40N2LH5
(Rev.:2008)

N-channel 25 V, 0.01 Ω, 40 A, DPAK, IPAK STripFET™ V Power MOSFET

STMicroelectronics 

Electrical ratings

1

Electrical ratings

STD40N2LH5 - STU40N2LH5

Table 2. Absolute maximum ratings

Symbol

Parameter

VDS

VGS

ID

ID

IDM (1)

PTOT

Drain-source voltage (VGS=0)

Gate-Source voltage

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

Drain current (pulsed)

Total dissipation at TC = 25 °C

Derating factor

EAS (2) Single pulse avalanche energy

Tj

Operating junction temperature

Tstg Storage temperature

1. Pulse width limited by safe operating area

2. Starting Tj = 25 °C, ID = 24 A, VDD = 12 V

Table 3. Thermal resistance

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-amb Thermal resistance junction-case max

Tl

Maximum lead temperature for soldering purpose

Value

25

± 22

40

28

160

35

0.23

TBD

-55 to 175

Value

4.3

100

275

Unit

V

V

A

A

A

W

W/°C

mJ

°C

Unit

°C/W

°C/W

°C

2/12

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