SUD50N02-06P 查看數據表（PDF） - Vishay Semiconductors
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SUD50N02-06P Datasheet PDF : 7 Pages
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TYPICAL CHARACTERISTICS (25 °C unless noted)
100
TC = - 55 °C
80
25 °C
60
125 °C
40
20
0
0
3500
10
20
30
40
50
ID - Drain Current (A)
Transconductance
3000
Ciss
2500
2000
1500
1000
Crss
500
Coss
0
0
4
8
12
16
20
VDS - Drain-to-Source Voltage (V)
Capacitance
1.6
VGS = 10 V
ID = 30 A
1.4
SUD50N02-06P
Vishay Siliconix
0.010
0.008
0.006
0.004
0.002
VGS = 4.5 V
VGS = 6.3 V
VGS = 10 V
0.000
0
10
20
40
60
80
100
ID - Drain Current (A)
On-Resistance vs. Drain Current
8
VDS = 10 V
ID = 50 A
6
4
2
0
0
100
8
16
24
32
40
Qg - Total Gate Charge (nC)
Gate Charge
1.2
TJ = 150 °C
TJ = 25 °C
10
1.0
0.8
0.6
- 50 - 25
0 25 50 75 100 125 150 175
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
1
0
0.3
0.6
0.9
1.2
1.5
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
Document Number: 71931
www.vishay.com
S11-2308-Rev. D, 21-Nov-11
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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