SUM110N03-03P 查看數據表（PDF） - Vishay Semiconductors

零件编号

产品描述 (功能)

生产厂家

SUM110N03-03P

N-Channel 30-V (D-S) 175℃ MOSFET (SPICE Device Model)

Vishay Semiconductors 

SPICE Device Model SUM110N03-03P

Vishay Siliconix

SPECIFICATIONS (TJ = 25°C UNLESS OTHERWISE NOTED)

Parameter

Symbol

Test Conditions

Static

Gate Threshold Voltage

On-State Drain Currenta

VGS(th)

ID(on)

Drain-Source On-State Resistancea

rDS(on)

Forward Voltagea

VSD

Dynamicb

Input Capacitance

Ciss

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Total Gate Chargec

Qg

Gate-Source Chargec

Qgs

Gate-Drain Chargec

Qgd

Turn-On Delay Timec

td(on)

Rise Timec

tr

Turn-Off Delay Timec

td(off)

Fall Timec

tf

Source-Drain Reverse Recovery Time

trr

Notes

a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2%.

b. Guaranteed by design, not subject to production testing.

c. Independent of operating temperature.

VDS = VGS, ID = 250 µA

VDS = 5 V, VGS = 10 V

VGS = 10 V, ID = 30 A

VGS = 10 V, ID = 30 A, TJ = 125°C

VGS = 4.5 V, ID = 20 A

IF = 110 A, VGS = 0 V

VGS = 0 V, VDS = 25 V, f = 1 MHz

VDS = 15 V, VGS = 10 V, ID = 110 A

VDD = 15 V, RL = 0.18 Ω

ID ≅ 110 A, VGEN = 10 V, RG = 2.5 Ω

IF = 85 A, di/dt = 100 A/µs

Simulated Measured

Data

Data

1.8

1708

0.0019

0.0026

0.0030

0.93

0.0020

0.0031

1.1

11410

811

498

194

40

40

19

23

50

44

31

12100

1910

1250

172

40

22

20

20

90

25

60

Unit

V

A

Ω

V

pF

nC

ns

www.vishay.com

2

Document Number: 70095

09-Jun-04

Share Link: