SUP40N10-30 查看數據表（PDF） - Vishay Semiconductors
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SUP40N10-30 Datasheet PDF : 6 Pages
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SUP40N10-30
Vishay Siliconix
N-Channel 100-V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V(BR)DSS (V)
rDS(on) (Ω)
100
0.030 at VGS = 10 V
0.034 at VGS = 6 V
TO-220AB
ID (A)
40
37.5
FEATURES
• TrenchFET® Power MOSFET
• 175 °C Junction Temperature
D
Available
RoHS*
COMPLIANT
GD S
Top View
Ordering Information: SUP40N10-30
SUP40N10-30-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current (TJ = 175 °C)
TC = 25 °C
TC = 125 °C
ID
Pulsed Drain Current
IDM
Avalanche Current
IAS
Single Pulse Avalanche Energya
L = 0.1 mH
EAS
Maximum Power Dissipationa
TC = 25 °C
TA = 25 °Cc
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient
Junction-to-Case (Drain)
Notes:
a. Duty cycle ≤ 1 %.
b. See SOA curve for voltage derating.
c. When Mounted on 1" square PCB (FR-4 material).
PCB Mountc
Free Air
* Pb containing terminations are not RoHS compliant, exemptions may apply.
Document Number: 72135
S-71662-Rev. C, 06-Aug-07
Symbol
RthJA
RthJC
Limit
100
± 20
40
23
75
35
61
107b
3.75
- 55 to 175
Limit
40
62.5
1.4
Unit
V
A
mJ
W
°C
Unit
°C/W
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